发明申请
- 专利标题: SEMICONDUCTOR MEMORY DEVICE
- 专利标题(中): 半导体存储器件
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申请号: US12563349申请日: 2009-09-21
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公开(公告)号: US20100080038A1公开(公告)日: 2010-04-01
- 发明人: Nobuyoshi Awaya , Takashi Nakano
- 申请人: Nobuyoshi Awaya , Takashi Nakano
- 优先权: JP2008-248180 20080926
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C7/00 ; H01L47/00
摘要:
An inexpensive nonvolatile memory having high performance which makes random write and readout possible an unlimited number of times is provided. A unit memory cell is formed of a MISFET having a channel body that is electrically isolated from a semiconductor substrate and a resistance change element having a two-terminal structure with one end electrically connected to a drain of the MISFET. The MISFET functions as a volatile memory element, and the resistance change element functions as a nonvolatile memory element, so that information stored in the MISFET is copied to the resistance change element before the power is turned OFF and information stored in the resistance change element is transferred to the MISFET when the power is turned ON, and thus, the MISFET is used as a volatile memory which makes random write and readout possible.
公开/授权文献
- US08036017B2 Semiconductor memory device 公开/授权日:2011-10-11
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