发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US12629981申请日： 2009-12-03
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公开(公告)号： US20100080046A1公开(公告)日： 2010-04-01
- 发明人: MASANAO YAMAOKA , Koichiro Ishibashi , Shigezumi Matsui , Kenichi Osada
- 申请人： MASANAO YAMAOKA , Koichiro Ishibashi , Shigezumi Matsui , Kenichi Osada
- 专利权人： RENESAS TECHNOLOGY CORP.
- 当前专利权人： RENESAS TECHNOLOGY CORP.
- 优先权： JPP2001-324357 20011023
- 主分类号： G11C5/14
- IPC分类号： G11C5/14 ; G11C11/413
摘要：
A logic circuit in a system LSI is provided with a power switch so as to cut off the switch at the time of standby, reducing leakage current. At the same time, an SRAM circuit of the system LSI controls a substrate bias to reduce leakage current.
公开/授权文献
- US07961545B2 Semiconductor device 公开/授权日：2011-06-14
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