- 专利标题： Methods of manufacturing semiconductor device
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申请号： US12584321申请日： 2009-09-03
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公开(公告)号： US20100081263A1公开(公告)日： 2010-04-01
- 发明人: Hideki Horii , Jeonghee Park , Youngkuk Kim
- 申请人： Hideki Horii , Jeonghee Park , Youngkuk Kim
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2008-0095936 20080930
- 主分类号： H01L47/00
- IPC分类号： H01L47/00
摘要：
A method of manufacturing a semiconductor device includes forming a phase change material pattern on a top surface of an insulating layer including an opening and in the opening, and forming a compressive layer compressing the phase change material pattern on the phase change material pattern.
公开/授权文献
- US07767491B2 Methods of manufacturing semiconductor device 公开/授权日：2010-08-03
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