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发明申请
US20100095997A1 Stacked thin-film superlattice thermoelectric devices 有权
堆叠薄膜超晶格热电装置

Stacked thin-film superlattice thermoelectric devices
摘要：
A thermoelectric device (31) includes a plurality of alternating p-type and n-type semiconductor thermoelectric elements (32, 34, 36; 33, 35 37) the elements (32-37) being separated by electrically and thermally conductive interconnects (40-45), alternating interconnects (40-44) extending in an opposite direction from interconnects (41-45) interspersed therewith. Each thin-film element comprises several hundred thermoelectric alloy A superlattice thin-films interspersed with several hundred thermoelectric alloy B superlattice thin-films, the thin-film elements being between 5 and 25 microns thick and preferably over 10 microns thick. The thin-film elements may be interspersed with opposite type thin-film elements or with opposite type bulk elements (33a, 34a). The interconnects are preferably joined to the elements by diffusion bonding.
摘要（中）：

热电装置（31）包括多个交替的p型和n型半导体热电元件（32,34,36; 33,35 37），所述元件（32-37）由导电和导热互连（40 -45），交替互连（40-44），其沿与其散布的互连（41-45）相反的方向延伸。 每个薄膜元件包括散布有数百个热电合金B超晶格薄膜的数百个热电合金A超晶格薄膜，薄膜元件的厚度为5至25微米，优选超过10微米厚。 薄膜元件可以散布相对的薄膜元件或相对的体积元件（33a，34a）。 互连优选通过扩散接合连接到元件。

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