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发明申请
US20100096731A1 Semiconductor Device and Method of Forming Stepped-Down RDL and Recessed THV in Peripheral Region of the Device 有权
半导体器件和在器件的外围区域中形成步进式RDL和嵌入式THV的方法

Semiconductor Device and Method of Forming Stepped-Down RDL and Recessed THV in Peripheral Region of the Device
摘要：
A semiconductor die has a peripheral region around the die. An insulating layer is formed over the semiconductor die. A portion of the insulating layer and peripheral is removed to form a recess around the semiconductor die. A conductive layer is deposited over the insulating layer and recess. The conductive layer is electrically connected to contact pads on the semiconductor die and conforms to a step into the recess. A gap is created through the conductive layer and peripheral region around the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. The conductive THV is recessed with respect to a surface of the semiconductor die. The conductive THV is electrically connected to the conductive layer.
摘要（中）：

半导体管芯具有围绕管芯的周边区域。 在半导体管芯上形成绝缘层。 去除绝缘层和周边的一部分以在半导体管芯周围形成凹陷。 在绝缘层和凹槽上沉积导电层。 导电层电连接到半导体管芯上的接触焊盘，并符合入凹槽的步骤。 通过半导体管芯周围的导电层和周边区域产生间隙。 绝缘材料沉积在间隙中。 绝缘材料的一部分被去除以形成通孔（THV）。 导电材料沉积在THV中以形成导电THV。 导电THV相对于半导体管芯的表面凹陷。 导电THV与导电层电连接。

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