发明申请
- 专利标题: SEMICONDUCTOR CHIP AND SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体芯片和半导体器件
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申请号: US12529443申请日: 2008-02-29
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公开(公告)号: US20100097159A1公开(公告)日: 2010-04-22
- 发明人: Eiji Hankui , Toshihide Kuriyama , Hideki Sasaki , Muneo Fukaishi
- 申请人: Eiji Hankui , Toshihide Kuriyama , Hideki Sasaki , Muneo Fukaishi
- 优先权: JP2007-060352 20070309
- 国际申请: PCT/JP2008/053612 WO 20080229
- 主分类号: H01P1/10
- IPC分类号: H01P1/10 ; H01P1/04
摘要:
There are provided a semiconductor device and a semiconductor chip, in which the interconnection is made to be highly reliable by stacking three or more layers of chips without contact therebetween. A semiconductor chip of the present invention comprises a first signal transmission circuit, a silicon substrate on which a first changeover switch is formed, and an interconnection layer on which a first capacitive-coupling upper electrode is formed, wherein a first capacitive-coupling lower electrode is additionally formed on the rear surface of the silicon substrate through a first via hole that penetrates the silicon substrate and, whereas the first capacitive-coupling upper electrode is directly connected to the first signal transmission circuit, the first capacitive-coupling lower electrode is connected to the first signal transmission circuit through the first via hole and through the first changeover switch.
公开/授权文献
- US07990747B2 Semiconductor chip and semiconductor device 公开/授权日:2011-08-02