发明申请
- 专利标题： GAPFILL IMPROVEMENT WITH LOW ETCH RATE DIELECTRIC LINERS
- 专利标题（中）： GAPFILL改进与低调速电介质线
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申请号： US12437256申请日： 2009-05-07
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公开(公告)号： US20100099236A1公开(公告)日： 2010-04-22
- 发明人: Young Soo Kwon , Bi Jang , Anchuan Wang , Young S. Lee , Mihaela Balseanu , Li-Qun Xia , Jin Ho Jeon
- 申请人： Young Soo Kwon , Bi Jang , Anchuan Wang , Young S. Lee , Mihaela Balseanu , Li-Qun Xia , Jin Ho Jeon
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/31
摘要：
A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.
公开/授权文献
- US07910491B2 Gapfill improvement with low etch rate dielectric liners 公开/授权日：2011-03-22