发明申请
- 专利标题： Flash memory system and designing method of flash translation layer thereof
- 专利标题（中）： 闪存系统及其闪存转换层的设计方法
-
申请号： US12588198申请日： 2009-10-07
-
公开(公告)号： US20100100667A1公开(公告)日： 2010-04-22
- 发明人: Jeonguk Kang , Yong-Goo Lee , Chanik Park , Jin Soo Kim
- 申请人： Jeonguk Kang , Yong-Goo Lee , Chanik Park , Jin Soo Kim
- 专利权人： Samsung Electronics Co. Ltd.,Korea Advanced Institute of Science and Technology
- 当前专利权人： Samsung Electronics Co. Ltd.,Korea Advanced Institute of Science and Technology
- 优先权： KR10-2008-0101610 20081016
- 主分类号： G06F12/00
- IPC分类号： G06F12/00 ; G06F12/02 ; G06F12/10
摘要：
The method of designing a flash translation layer includes receiving a logical address according to an external request and mapping a physical address that corresponds to the logical address. The mapping manages continuous logical addresses and physical addresses corresponding to the logical addresses as one mapping unit.