Method for producing a metal-containing film by introducing a metal source which does not contain metal-C or metal-N—C s-bonds (for example, TaCl 5 , SEt 2 ), a silicon precursor (for example, SiH(NMe 2 ) 3 or (SiH 3 ) 3 N), a nitrogen precursor such as ammonia, a carbon source such as monomethylamine or ethylene and a reducing agent (for example, H 2 ) into a CVD chamber and reacting same at the surface of a substrate to produce metal containing films in a single step.