Invention Application
- Patent Title: PH Buffering Hybrid Material and the Forming Method Thereof
- Patent Title (中): PH缓冲混合材料及其成型方法
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Application No.: US12258574Application Date: 2008-10-27
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Publication No.: US20100105271A1Publication Date: 2010-04-29
- Inventor: Wen-Chang Chen , Wen-Yen Chiu , Kuo-Chuan Ho , Chi-An Dai , Jui-Hung Chen
- Applicant: Wen-Chang Chen , Wen-Yen Chiu , Kuo-Chuan Ho , Chi-An Dai , Jui-Hung Chen
- Applicant Address: TW Taipei City
- Assignee: NATIONAL TAIWAN UNIVERSITY
- Current Assignee: NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Taipei City
- Main IPC: B32B9/04
- IPC: B32B9/04 ; B05D3/02 ; B05D3/12 ; B32B5/16 ; B32B17/06
Abstract:
The present invention discloses a pH buffering hybrid material and the forming method thereof. The pH buffering hybrid material comprises a substrate, a conductive polymer layer on the substrate, and a ZnO nanorod layer produced by deposition of ZnO particles as nucleuses on the conductive polymer layer, and the ZnO particles growing into the ZnO nanorods via hydrothermal reaction. The pH buffering hybrid material has the pH turning ability and the potential of conductivity.
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