发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US12608751申请日： 2009-10-29
-
公开(公告)号： US20100109052A1公开(公告)日： 2010-05-06
- 发明人: Shizuki NAKAJIMA , Hiroyuki NAGAI , Yuji SHIRAI , Hirokazu NAKEJIMA , Chushiro KUSANO , Yu HASEGAWA , Chiko YORITA , Yasuo OSONE
- 申请人： Shizuki NAKAJIMA , Hiroyuki NAGAI , Yuji SHIRAI , Hirokazu NAKEJIMA , Chushiro KUSANO , Yu HASEGAWA , Chiko YORITA , Yasuo OSONE
- 专利权人： RENESAS TECHNOLOGY CORP.
- 当前专利权人： RENESAS TECHNOLOGY CORP.
- 优先权： JPJP2008-283810 20081105; JPJP2009-097248 20090413; JPJP2009-198360 20090828
- 主分类号： H01L27/082
- IPC分类号： H01L27/082 ; H01L27/088 ; H01L21/8222 ; H01L29/78
摘要：
In a semiconductor chip in which LDMOSFET elements for power amplifier circuits used for a power amplifier module are formed, a source bump electrode is disposed on an LDMOSFET formation region in which a plurality of source regions, a plurality of drain regions and a plurality of gate electrodes for the LDMOSFET elements are formed. The source bump electrode is formed on a source pad mainly made of aluminum via a source conductor layer which is thicker than the source pad and mainly made of copper. No resin film is interposed between the source bump electrode and the source conductor layer.
公开/授权文献
- US08742499B2 Semiconductor device and manufacturing method thereof 公开/授权日：2014-06-03