发明申请
- 专利标题: SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
- 专利标题(中): 半导体集成电路设备
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申请号: US12606812申请日: 2009-10-27
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公开(公告)号: US20100109096A1公开(公告)日: 2010-05-06
- 发明人: Kenichi Osada , Makoto Saen , Futoshi Furuta
- 申请人: Kenichi Osada , Makoto Saen , Futoshi Furuta
- 专利权人: HITACHI, LTD.
- 当前专利权人: HITACHI, LTD.
- 优先权: JPJP2008-281711 20081031
- 主分类号: H01L25/065
- IPC分类号: H01L25/065
摘要:
A semiconductor integrated circuit device capable of achieving improvement of I/O processing performance, reduction of power consumption, and reduction of cost is provided. Provided is a semiconductor integrated circuit device including, for example, a plurality of semiconductor chips stacked and mounted, the chips having data transceiving terminals bus-connected via through-vias, and data transmission and reception are performed via the bus with using the lowest source voltage among source voltages of internal core circuits of the chips. In accordance with that, a source voltage terminal of an n-th chip to be at the lowest source voltage is connected with source voltage terminals for data transceiving circuits of the other semiconductor chips via through-vias.
公开/授权文献
- US08253227B2 Semiconductor integrated circuit device 公开/授权日:2012-08-28
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