发明申请
- 专利标题: VOLTAGE BOOSTING CIRCUIT AND SEMICONDUCTOR DEVICE
- 专利标题(中): 电压升压电路和半导体器件
-
申请号: US12610601申请日: 2009-11-02
-
公开(公告)号: US20100109760A1公开(公告)日: 2010-05-06
- 发明人: Jeong Sik NAM , Hi Choon LEE
- 申请人: Jeong Sik NAM , Hi Choon LEE
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2008-0108718 20081104
- 主分类号: G05F1/10
- IPC分类号: G05F1/10
摘要:
A voltage boosting circuit includes a first voltage boosting circuit configured to receive an external power supply voltage, and pump the external power supply voltage to a second boosting voltage higher than the external supply voltage in a single pumping stage, and a second voltage boosting circuit configured to receive the second boosting voltage and pump the second boosting voltage to a first boosting voltage higher than the second boosting voltage in two pumping stages.
公开/授权文献
- US07978002B2 Voltage boosting circuit and semiconductor device 公开/授权日:2011-07-12
信息查询
IPC分类: