发明申请
US20100109775A1 SEMICONDUCTOR DEVICE HAVING RESISTORS WITH A BIASED SUBSTRATE VOLTAGE
有权
具有偏置基板电压的电阻器的半导体器件
- 专利标题： SEMICONDUCTOR DEVICE HAVING RESISTORS WITH A BIASED SUBSTRATE VOLTAGE
- 专利标题（中）： 具有偏置基板电压的电阻器的半导体器件
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申请号： US12570650申请日： 2009-09-30
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公开(公告)号： US20100109775A1公开(公告)日： 2010-05-06
- 发明人: Masaomi KAMAKURA , Toshio Kumamoto , Takashi Okuda
- 申请人： Masaomi KAMAKURA , Toshio Kumamoto , Takashi Okuda
- 专利权人： RENESAS TECHNOLOGY CORP.
- 当前专利权人： RENESAS TECHNOLOGY CORP.
- 优先权： JP2008-281160 20081031
- 主分类号： H03F3/45
- IPC分类号： H03F3/45 ; H01C1/012 ; H03F3/04
摘要：
To eliminate the substrate voltage dependences of the respective resistance values of resistor elements, in the resistor elements coupled in series to each other over respective substrate regions, the ends of the resistor elements are coupled to the corresponding substrate regions by respective bias wires such that respective average potentials between the substrate regions of the resistor elements and the corresponding resistor elements have opposite polarities, and equal magnitudes.
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