发明申请
US20100110584A1 Dual oxide recording sublayers in perpendicular recording media
审中-公开
双重氧化记录子层在垂直记录介质中
- 专利标题: Dual oxide recording sublayers in perpendicular recording media
- 专利标题(中): 双重氧化记录子层在垂直记录介质中
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申请号: US12290515申请日: 2008-10-30
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公开(公告)号: US20100110584A1公开(公告)日: 2010-05-06
- 发明人: Qing Dai , Hoa Van Do , Mary Frances Minardi , Kentaro Takano , Kai Tang , Jinliu Wang
- 申请人: Qing Dai , Hoa Van Do , Mary Frances Minardi , Kentaro Takano , Kai Tang , Jinliu Wang
- 主分类号: G11B5/127
- IPC分类号: G11B5/127 ; G11B5/66
摘要:
A method is described for improving recording performance of a perpendicular media. The method includes using a dual oxide layer as a sublayer of a magnetic recording layer of the perpendicular media. The dual oxide sublayer improves recording performance, increases resistance to corrosion and allows for a thinner exchange break layer. The dual oxide layer generally includes oxides of tantalum and one of silicon or boron.
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