发明申请
- 专利标题： Programmable resistance memory
- 专利标题（中）： 可编程电阻记忆
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申请号： US12291111申请日： 2008-11-06
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公开(公告)号： US20100110780A1公开(公告)日： 2010-05-06
- 发明人: Guy Wicker
- 申请人： Guy Wicker
- 专利权人： Ovonyx, Inc.
- 当前专利权人： Ovonyx, Inc.
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C7/00
摘要：
A minimal-duration current pulse is employed to program a programmable resistance memory to a high-resistance, RESET state. Although the duration and magnitude of RESET programming pulses in accordance with the principles of the present invention may vary depending, for example, upon the composition and structure of a cell, a method and apparatus in accordance with the principles of the present invention employs the briefest pulse practicable for a given cell or array of cells.
公开/授权文献
- US08120940B2 Programmable resistance memory 公开/授权日：2012-02-21
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