发明申请
- 专利标题: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题(中): 制造半导体器件的方法
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申请号: US12614632申请日: 2009-11-09
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公开(公告)号: US20100112765A1公开(公告)日: 2010-05-06
- 发明人: Hitoshi Yamaguchi , Takeshi Miyajima , Nozomu Akagi
- 申请人: Hitoshi Yamaguchi , Takeshi Miyajima , Nozomu Akagi
- 申请人地址: JP Kariya-city
- 专利权人: DENSO CORPORATION
- 当前专利权人: DENSO CORPORATION
- 当前专利权人地址: JP Kariya-city
- 优先权: JPJP2006-219477 20060811
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L21/8234
摘要:
A manufacturing method of a semiconductor device includes: forming multiple trenches on a semiconductor substrate; forming a second conductive type semiconductor film in each trench to provide a first column with the substrate between two trenches and a second column with the second conductive type semiconductor film in the trench, the first and second columns alternately repeated along with a predetermined direction; thinning a second side of the substrate; and increasing an impurity concentration in a thinned second side so that a first conductive type layer is provided. The impurity concentration of the first conductive type layer is higher than the first column. The first column provides a drift layer so that a vertical type first-conductive-type channel transistor is formed.