发明申请
US20100117764A1 Assisted selective growth of highly dense and vertically aligned carbon nanotubes
审中-公开
辅助选择生长高密度和垂直排列的碳纳米管
- 专利标题： Assisted selective growth of highly dense and vertically aligned carbon nanotubes
- 专利标题（中）： 辅助选择生长高密度和垂直排列的碳纳米管
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申请号： US11405657申请日： 2006-04-17
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公开(公告)号： US20100117764A1公开(公告)日： 2010-05-13
- 发明人: Yunyu Wang , Paul S. Ho , Li Shi , Zhen Yao
- 申请人： Yunyu Wang , Paul S. Ho , Li Shi , Zhen Yao
- 专利权人： Board of Regents, The University of Texas System
- 当前专利权人： Board of Regents, The University of Texas System
- 主分类号： H01P1/20
- IPC分类号： H01P1/20 ; C23C16/26 ; C03C17/38
摘要：
The selective growth of vertically aligned, highly dense carbon nanotube (CNT) arrays using a thermal catalytic chemical vapor deposition (CCVD) method via selection of the supporting layer where the thin catalyst layer is deposited on. A thin iron (Fe) catalyst deposited on a supporting layer of tantalum (Ta) yielded CCVD growth of the vertical dense CNT arrays. Cross-sectional transmission electron microscopy revealed a Vollmer-Weber mode of Fe island growth on Ta, with a small contact angle of the islands controlled by the relative surface energies of the supporting layer, the catalyst and their interface. The as-formed Fe island morphology promoted surface diffusion of carbon atoms seeding the growth of the CNTs from the catalyst surface.