发明申请
US20100118621A1 Implementing Variation Tolerant Memory Array Signal Timing 审中-公开
实现变化容差存储器阵列信号时序

Implementing Variation Tolerant Memory Array Signal Timing
摘要:
A method and signal timing adjustment circuit for implementing variation tolerant memory array signal timing, and a design structure on which the subject circuit resides are provided. A logic circuit generates a first delay signal based upon logic devices forming the logic circuit. A memory cell circuit receives the first delay signal and generates control signals responsive to the first delay signal and based upon memory cell devices forming the memory cell circuit. A programmable logic delay circuit receives the control signals and generates a timing adjustment signal.
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