发明申请
- 专利标题: Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
- 专利标题(中): 阻止含有热酸发生剂的下层组合物,抗下层薄膜形成基材和图案化工艺
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申请号: US12588590申请日: 2009-10-20
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公开(公告)号: US20100119970A1公开(公告)日: 2010-05-13
- 发明人: Youichi Ohsawa , Jun Hatakeyama , Takeru Watanabe , Takeshi Kinsho
- 申请人: Youichi Ohsawa , Jun Hatakeyama , Takeru Watanabe , Takeshi Kinsho
- 申请人地址: JP Tokyo
- 专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-286593 20081107
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; C07C309/19 ; C07C309/04 ; G03F7/004
摘要:
There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher. RCOO—CH2CF2SO3−H+ (1) There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.