发明申请
- 专利标题: METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE
- 专利标题(中): 制造光伏器件的方法
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申请号: US12531905申请日: 2007-12-20
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公开(公告)号: US20100120188A1公开(公告)日: 2010-05-13
- 发明人: Kunihiko Nishimura , Shigeru Matsuno
- 申请人: Kunihiko Nishimura , Shigeru Matsuno
- 申请人地址: JP Chiyoda-ku, Tokyo
- 专利权人: MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人: MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址: JP Chiyoda-ku, Tokyo
- 优先权: JP2007-199009 20070731
- 国际申请: PCT/JP2007/074510 WO 20071220
- 主分类号: H01L21/308
- IPC分类号: H01L21/308 ; H01L31/00
摘要:
Provided is a method for manufacturing a photovoltaic device which is capable of easily forming a texture having an aspect ratio larger than 0.5. The method for manufacturing a photovoltaic device include the steps of: forming an etching-resistant film on a silicon substrate; forming a plurality of fine holes in the etching-resistant film with an irradiated laser beam which has a focal depth adjusted to 10 μm or more to expose a surface of the silicon substrate which is a base layer; and etching the exposed surface of the silicon substrate, in which the step of exposing the surface of the silicon substrate includes forming a fine recess at a concentric position to each of the fine holes in the surface of the silicon substrate which lies under the etching-resistant film.
公开/授权文献
- US08039396B2 Method for manufacturing photovoltaic device 公开/授权日:2011-10-18
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