发明申请
- 专利标题： SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- 专利标题（中）： 半导体器件制造方法
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申请号： US12564440申请日： 2009-09-22
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公开(公告)号： US20100120255A1公开(公告)日： 2010-05-13
- 发明人: Kentaro MATSUNGA , Hirokazu Kato , Tomoya Oori
- 申请人： Kentaro MATSUNGA , Hirokazu Kato , Tomoya Oori
- 优先权： JP2008-290744 20081113
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01L21/306
摘要：
A semiconductor device manufacturing method includes: forming a core pattern on a foundation film, the core pattern containing a material generating acid by light exposure; selectively exposing part of the core pattern except an longitudinal end portion; supplying a mask material onto the foundation film so as to cover the core pattern, the mask material being crosslinkable upon supply acid from the core pattern; etching back the mask material to expose an upper surface of the core pattern and remove a portion of the mask material formed on the end portion of the core pattern, thereby leaving a mask material side wall portion formed on a side wall of the core pattern; and removing the core pattern and processing the foundation film by using the mask material sidewall portion left on the foundation film as a mask.
公开/授权文献
- US08138059B2 Semiconductor device manufacturing method 公开/授权日：2012-03-20
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