发明申请
- 专利标题: SUPER-RESOLUTION LITHOGRAPHY APPARATUS AND METHOD BASED ON MULTI LIGHT EXPOSURE METHOD
- 专利标题(中): 基于多光子曝光方法的超分辨率光刻设备及方法
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申请号: US12403111申请日: 2009-03-12
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公开(公告)号: US20100123889A1公开(公告)日: 2010-05-20
- 发明人: Hee Su PARK , Sun Kyung LEE , Jae Yong LEE , Sang-Kyung CHOI , Dong-Hoon LEE
- 申请人: Hee Su PARK , Sun Kyung LEE , Jae Yong LEE , Sang-Kyung CHOI , Dong-Hoon LEE
- 申请人地址: KR Daejeon
- 专利权人: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
- 当前专利权人: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
- 当前专利权人地址: KR Daejeon
- 优先权: KR10-2008-0115576 20081120
- 主分类号: G03B27/54
- IPC分类号: G03B27/54 ; G03B27/32
摘要:
Disclosed herein is a super-resolution lithography apparatus and method based on a multiple light exposure method. The super-resolution lithography apparatus comprises a photographic medium having energy levels of a first ground state, a second ground state, a first excited state, a second excited state and a quenching state; a first light source inducing energy level transition between the first ground state and the first excited state of the photographic medium; a second light source inducing energy level transition between the second ground state and the first excited state of the photographic medium; and a third light source inducing energy level transition between the second ground state and the second excited state of the photographic medium. Accordingly, the resolution of lithography can be improved simply by using a photographic medium having a simple structure and conventional laser beams and increasing the number of exposure steps. Furthermore, a multiple photon absorber that is difficult to obtain, a medium having a complicated energy level and a high-efficiency quantum optical light are unnecessary, and thus economic efficiency is improved.