发明申请
US20100127206A1 Method for Forming a Nanostructure, a Nanostructure, and a Device Using the Same
审中-公开
形成纳米结构,纳米结构的方法和使用其的装置
- 专利标题: Method for Forming a Nanostructure, a Nanostructure, and a Device Using the Same
- 专利标题(中): 形成纳米结构,纳米结构的方法和使用其的装置
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申请号: US12468586申请日: 2009-05-19
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公开(公告)号: US20100127206A1公开(公告)日: 2010-05-27
- 发明人: Jaeyoung CHOI , Sang Woo KIM
- 申请人: Jaeyoung CHOI , Sang Woo KIM
- 申请人地址: KR Suwon-si KR Gumi-si
- 专利权人: SAMSUNG ELECTRONICS, CO., LTD,KUMOH NATIONAL INSTITUTE OF TECHNOLOGY
- 当前专利权人: SAMSUNG ELECTRONICS, CO., LTD,KUMOH NATIONAL INSTITUTE OF TECHNOLOGY
- 当前专利权人地址: KR Suwon-si KR Gumi-si
- 优先权: KR10-2008-0116956 20081124
- 主分类号: H01L41/18
- IPC分类号: H01L41/18 ; C23F1/00
摘要:
A method for forming a nanostructure, a nanostructure and a device using the nanostructure, wherein hydroxide ions are provided to a surface of a nanostructure including a piezoelectric material in order to etch an outer surface of the nanostructure. In an exemplary embodiment, the nanostructure may be etched by contacting the nanostructure with a basic solution. In other exemplary embodiments the etching of the nanostructure may be performed while controlling at least one of the concentration of the basic solution, the temperature of the basic solution and the etching time. The resultant nanostructure includes a piezoelectric material and has an etched outer surface. The nanostructure may be applied to various devices.
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