发明申请
US20100129947A1 Resistance-variable memory device, method for fabricating the same and memory system including the same
审中-公开
电阻可变存储器件，其制造方法和包括该器件的存储器系统
- 专利标题： Resistance-variable memory device, method for fabricating the same and memory system including the same
- 专利标题（中）： 电阻可变存储器件，其制造方法和包括该器件的存储器系统
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申请号： US12591393申请日： 2009-11-18
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公开(公告)号： US20100129947A1公开(公告)日： 2010-05-27
- 发明人: Hyun-Suk Lee , Tai-Soo Lim , HyunSeok Lim , Insun Park , Jaehyoung Choi
- 申请人： Hyun-Suk Lee , Tai-Soo Lim , HyunSeok Lim , Insun Park , Jaehyoung Choi
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2008-0118887 20081127
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/00
摘要：
In the method of fabricating the variable-resistance memory device, a substrate including a conductive region is provided, and a preliminary lower electrode is formed on the conductive region. A lower electrode is formed by oxidizing an upper portion of the preliminary lower electrode. A phase-change material layer is formed on the lower electrode.
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