Invention Application
US20100129947A1 Resistance-variable memory device, method for fabricating the same and memory system including the same
审中-公开
电阻可变存储器件，其制造方法和包括该器件的存储器系统
- Patent Title: Resistance-variable memory device, method for fabricating the same and memory system including the same
- Patent Title (中): 电阻可变存储器件，其制造方法和包括该器件的存储器系统
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Application No.: US12591393Application Date: 2009-11-18
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Publication No.: US20100129947A1Publication Date: 2010-05-27
- Inventor: Hyun-Suk Lee , Tai-Soo Lim , HyunSeok Lim , Insun Park , Jaehyoung Choi
- Applicant: Hyun-Suk Lee , Tai-Soo Lim , HyunSeok Lim , Insun Park , Jaehyoung Choi
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Priority: KR10-2008-0118887 20081127
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L21/00
Abstract:
In the method of fabricating the variable-resistance memory device, a substrate including a conductive region is provided, and a preliminary lower electrode is formed on the conductive region. A lower electrode is formed by oxidizing an upper portion of the preliminary lower electrode. A phase-change material layer is formed on the lower electrode.
Information query
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