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US20100131826A1 ESTIMATION OF NON-LINEAR DISTORTION IN MEMORY DEVICES 有权
记忆装置中非线性失真的估计

ESTIMATION OF NON-LINEAR DISTORTION IN MEMORY DEVICES
摘要:
A method for operating a memory (24) includes storing data in analog memory cells (32) of the memory by writing respective analog values to the analog memory cells. A set of the analog memory cells is identified, including an interfered cell having a distortion that is statistically correlated with the respective analog values of the analog memory cells in the set. A mapping is determined between combinations of possible analog values of the analog memory cells in the set and statistical characteristics of composite distortion levels present in the interfered memory cell. The mapping is applied so as to compensate for the distortion in the interfered memory cell.
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