发明申请
- 专利标题: ESTIMATION OF NON-LINEAR DISTORTION IN MEMORY DEVICES
- 专利标题(中): 记忆装置中非线性失真的估计
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申请号: US11995813申请日: 2007-08-27
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公开(公告)号: US20100131826A1公开(公告)日: 2010-05-27
- 发明人: Ofir Shalvi , Naftali Sommer , Eyal Gurgi , Oren Golov , Dotan Sokolov
- 申请人: Ofir Shalvi , Naftali Sommer , Eyal Gurgi , Oren Golov , Dotan Sokolov
- 申请人地址: IL Herzilia
- 专利权人: Anobit Technologies Ltd.
- 当前专利权人: Anobit Technologies Ltd.
- 当前专利权人地址: IL Herzilia
- 国际申请: PCT/IL2007/001059 WO 20070827
- 主分类号: H03M13/05
- IPC分类号: H03M13/05 ; G06F12/06 ; G06F12/00 ; G06F11/10 ; G06F11/07
摘要:
A method for operating a memory (24) includes storing data in analog memory cells (32) of the memory by writing respective analog values to the analog memory cells. A set of the analog memory cells is identified, including an interfered cell having a distortion that is statistically correlated with the respective analog values of the analog memory cells in the set. A mapping is determined between combinations of possible analog values of the analog memory cells in the set and statistical characteristics of composite distortion levels present in the interfered memory cell. The mapping is applied so as to compensate for the distortion in the interfered memory cell.
公开/授权文献
- US08060806B2 Estimation of non-linear distortion in memory devices 公开/授权日:2011-11-15
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