发明申请
US20100138595A1 SEMICONDUCTOR DEVICE COMPRISING FLASH MEMORY AND ADDRESS MAPPING METHOD
失效
包含闪速存储器和地址映射方法的半导体器件
- 专利标题: SEMICONDUCTOR DEVICE COMPRISING FLASH MEMORY AND ADDRESS MAPPING METHOD
- 专利标题(中): 包含闪速存储器和地址映射方法的半导体器件
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申请号: US12629268申请日: 2009-12-02
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公开(公告)号: US20100138595A1公开(公告)日: 2010-06-03
- 发明人: Han-bin YOON , Young-goo KO , Jung-been IM , Hwan-jin YONG , Chang-Hee LEE
- 申请人: Han-bin YOON , Young-goo KO , Jung-been IM , Hwan-jin YONG , Chang-Hee LEE
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2008-0122041 20081203
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F12/02
摘要:
A semiconductor device with flash memory includes; a log type determining unit configured to select log type from among a plurality of log types with respect to a log block storing program data requested to be programmed in the flash memory and generate a control signal indicating information indicating the selected log type, and a plurality of log units configured to store program data in the log block having a corresponding log type in response to the control signal, wherein the log type determining unit converts a first type log block formed by a first log type and included in a first type log unit from among the plurality of log units into second type log block formed by a second log type and converts the log block included in a second type log unit from among the plurality of log units into the first type log blocks, the first loge type being different from the second log type.
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