发明申请
- 专利标题: METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE
- 专利标题(中): 制造薄膜晶体管和薄膜晶体管基板的方法
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申请号: US12507725申请日: 2009-07-22
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公开(公告)号: US20100140706A1公开(公告)日: 2010-06-10
- 发明人: Jae Bon KOO , In-Kyu You , Seongdeok Ahn , Kyoung Ik Cho
- 申请人: Jae Bon KOO , In-Kyu You , Seongdeok Ahn , Kyoung Ik Cho
- 申请人地址: KR Daejeon
- 专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址: KR Daejeon
- 优先权: KR10-2008-0123240 20081205; KR10-2009-0026256 20090327
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L21/336
摘要:
Provided is a method of manufacturing a thin film transistor that can improve self-alignment. In this method, a semiconductor layer comprising a first doped region, a second doped region and a channel region is formed on a sacrificial layer on a first substrate. Next, the semiconductor layer is separated from the first substrate and is then coupled on a second substrate. Next, a dielectric layer is formed on the second substrate and the semiconductor layer, and a first photoresist layer is formed on the dielectric layer. Thereafter, the first photoresist layer is exposed to light from a rear surface of the second substrate by using the first doped region and the second doped region as a mask, to form a first mask pattern. Next, a gate electrode overlapping the channel region is formed on the dielectric layer by using the first mask pattern as a mask, and a source electrode and a drain electrode connected to the first doped region and the second doped region, respectively are formed to complete a thin film transistor.