发明申请
US20100140745A1 PULSED SELECTIVE AREA LATERAL EPITAXY FOR GROWTH OF III-NITRIDE MATERIALS OVER NON-POLAR AND SEMI-POLAR SUBSTRATES
有权
用于非极性和半极性基底上III-NITRIDE材料生长的选择区选择区域外延
- 专利标题： PULSED SELECTIVE AREA LATERAL EPITAXY FOR GROWTH OF III-NITRIDE MATERIALS OVER NON-POLAR AND SEMI-POLAR SUBSTRATES
- 专利标题（中）： 用于非极性和半极性基底上III-NITRIDE材料生长的选择区选择区域外延
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申请号： US12515991申请日： 2007-12-17
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公开(公告)号： US20100140745A1公开(公告)日： 2010-06-10
- 发明人: M. Asif Khan , Vinod Adivarahan
- 申请人： M. Asif Khan , Vinod Adivarahan
- 国际申请： PCT/US07/87751 WO 20071217
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; C30B25/04
摘要：
An epitaxy procedure for growing extremely low defect density non-polar and semi-polar III-nitride layers over a base layer, and the resulting structures, is generally described. In particular, a pulsed selective area lateral overgrowth of a group III nitride layer can be achieved on a non-polar and semi-polar base layer. By utilizing the novel P-MOCVD or PALE and lateral over growth over selected area, very high lateral growth conditions can be achieved at relatively lower growth temperature which does not affect the III-N surfaces.