发明申请
- 专利标题： FILM-FORMING MATERIAL, SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME
- 专利标题（中）： 薄膜形成材料，含硅绝缘膜及其形成方法
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申请号： US12377420申请日： 2007-08-14
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公开(公告)号： US20100140754A1公开(公告)日： 2010-06-10
- 发明人: Masahiro Akiyama , Hisashi Nakagawa , Terukazu Kokubo
- 申请人： Masahiro Akiyama , Hisashi Nakagawa , Terukazu Kokubo
- 申请人地址： JP Tokyo
- 专利权人： JSR CORPORATION
- 当前专利权人： JSR CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-221402 20060815; JP2007-049168 20070228
- 国际申请： PCT/JP2007/065857 WO 20070814
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/31 ; C07F7/08
摘要：
Disclosed is a silicon-containing film-forming material which contains an organosilane compound represented by the following general formula (1). (In the formula, R1-R4 may be the same or different and represent a hydrogen atom, an alkyl group having 1-4 carbon atoms, a vinyl group or a phenyl group; R5 represents an alkyl group having 1-4 carbon atoms, an acetyl group or a phenyl group; n represents an integer of 1-3; and m represents an integer of 1-2.)