发明申请
- 专利标题： Semiconductor Device
- 专利标题（中）： 半导体器件
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申请号： US12708044申请日： 2010-02-18
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公开(公告)号： US20100141229A1公开(公告)日： 2010-06-10
- 发明人: Yukihiro SATOU , Tomoaki Uno , Nobuyoshi Matsuura , Masaki Shiraishi
- 申请人： Yukihiro SATOU , Tomoaki Uno , Nobuyoshi Matsuura , Masaki Shiraishi
- 专利权人： RENESAS TECHNOLOGY CORP.
- 当前专利权人： RENESAS TECHNOLOGY CORP.
- 优先权： JP2004-106224 20040331
- 主分类号： G05F1/10
- IPC分类号： G05F1/10
摘要：
The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS·FET for a high side switch and a power MOS·FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.
公开/授权文献
- US08013430B2 Semiconductor device including DC-DC converter 公开/授权日：2011-09-06
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