发明申请
- 专利标题： BURIED CAPACITOR, METHOD OF MANUFACTURING THE SAME, AND METHOD OF CHANGING CAPACITANCE THEREOF
- 专利标题（中）： 烧结电容器，其制造方法及其电容变化方法
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申请号： US12499762申请日： 2009-07-08
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公开(公告)号： US20100142115A1公开(公告)日： 2010-06-10
- 发明人: Hyun-Cheol Bae , Kwang-Seong Choi , Ju Yeon Hong , Jong Tae Moon , Yong il Jun
- 申请人： Hyun-Cheol Bae , Kwang-Seong Choi , Ju Yeon Hong , Jong Tae Moon , Yong il Jun
- 申请人地址： KR Daejeon
- 专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2008-0123216 20081205; KR10-2009-0031274 20090410
- 主分类号： H01G5/00
- IPC分类号： H01G5/00 ; H01G7/00 ; B32B38/04
摘要：
Provided are a buried capacitor, a method of manufacturing the same, and a method of changing a capacitance thereof. The buried capacitor includes an upper electrode including at least one first hole, a lower electrode including at least one second hole, and a dielectric interposed between the upper electrode and the lower electrode.
信息查询
