发明申请
US20100142290A1 OUTPUT CIRCUIT FOR A SEMICONDUCTOR MEMORY DEVICE AND DATA OUTPUT METHOD 有权
用于半导体存储器件的输出电路和数据输出方法

  • 专利标题: OUTPUT CIRCUIT FOR A SEMICONDUCTOR MEMORY DEVICE AND DATA OUTPUT METHOD
  • 专利标题(中): 用于半导体存储器件的输出电路和数据输出方法
  • 申请号: US12707140
    申请日: 2010-02-17
  • 公开(公告)号: US20100142290A1
    公开(公告)日: 2010-06-10
  • 发明人: Yoshinori MATSUI
  • 申请人: Yoshinori MATSUI
  • 申请人地址: JP Tokyo
  • 专利权人: ELPIDA MEMORY, INC.
  • 当前专利权人: ELPIDA MEMORY, INC.
  • 当前专利权人地址: JP Tokyo
  • 优先权: JP2007-139104 20070525
  • 主分类号: G11C7/00
  • IPC分类号: G11C7/00
OUTPUT CIRCUIT FOR A SEMICONDUCTOR MEMORY DEVICE AND DATA OUTPUT METHOD
摘要:
An outputting transistor circuit of a push-pull structure has an outputting PMOS transistor and an outputting NMOS transistor connected in series between a first power supply and a grounded power supply. In a standby state, a voltage level of a gate terminal of the outputting PMOS transistor is set to a voltage level of a second power supply higher than a voltage level of the first power supply. In an active state, a voltage level of the gate terminal of the outputting PMOS transistor is changed to a voltage level of the first power supply in response to an active command or a read command, or in response to the state of a semiconductor memory device changing to the active state or a read state, and either the outputting PMOS transistor or the outputting NMOS transistor is turned ON in response to a data read signal from a memory cell.
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