发明申请
US20100142576A1 (Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE
有权
（Al，Ga，In）N二极管激光器在降低温度下制成
- 专利标题： (Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE
- 专利标题（中）： （Al，Ga，In）N二极管激光器在降低温度下制成
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申请号： US12476208申请日： 2009-06-01
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公开(公告)号： US20100142576A1公开(公告)日： 2010-06-10
- 发明人: Daniel A. Cohen , Steven P. DenBaars , Shuji Nakamura
- 申请人： Daniel A. Cohen , Steven P. DenBaars , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 主分类号： H01S5/323
- IPC分类号： H01S5/323 ; H01S5/00 ; H01L33/00
摘要：
A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.
公开/授权文献
- US08254423B2 (Al,Ga,In)N diode laser fabricated at reduced temperature 公开/授权日：2012-08-28
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