发明申请
US20100144095A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE IN WHICH BOTTOM SURFACE AND SIDE SURFACE OF SEMICONDUCTOR SUBSTRATE ARE COVERED WITH RESIN PROTECTIVE FILM 审中-公开
制造半导体衬底的半导体器件的表面和半导体衬底的表面覆盖有树脂保护膜的方法

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE IN WHICH BOTTOM SURFACE AND SIDE SURFACE OF SEMICONDUCTOR SUBSTRATE ARE COVERED WITH RESIN PROTECTIVE FILM
摘要:
First, a trench formed in parts of a semiconductor wafer, a sealing film and others corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entirety including the separated silicon substrates from being easily warped.
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