发明申请
- 专利标题： Method of manufacturing a phase changeable memory unit
- 专利标题（中）： 制造相变存储器单元的方法
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申请号： US12592816申请日： 2009-12-03
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公开(公告)号： US20100144135A1公开(公告)日： 2010-06-10
- 发明人: Hyun-Suk Kwon , Young-Soo Lim , Sung-Un Kwon , Yong-Ho Ha , Jeong-Hee Park , Joon-Sang Park , Myung-Jin Kang , Doo-Hwan Park
- 申请人： Hyun-Suk Kwon , Young-Soo Lim , Sung-Un Kwon , Yong-Ho Ha , Jeong-Hee Park , Joon-Sang Park , Myung-Jin Kang , Doo-Hwan Park
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2008-0122316 20081204
- 主分类号： H01L21/443
- IPC分类号： H01L21/443
摘要：
A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is formed on a substrate. The insulating interlayer structure has an opening and is formed on the lower electrode and the substrate. The opening exposes the lower electrode and has a width gradually decreasing downward. The phase changeable material layer fills the opening and partially covers an upper face of the insulating interlayer structure. The upper electrode is formed on the phase changeable material layer.