Invention Application
- Patent Title: METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12628310Application Date: 2009-12-01
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Publication No.: US20100144142A1Publication Date: 2010-06-10
- Inventor: Katsuji Yoshida
- Applicant: Katsuji Yoshida
- Applicant Address: JP Tokyo
- Assignee: OKI SEMICONDUCTOR CO., LTD.
- Current Assignee: OKI SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Tokyo
- Priority: JP2008-309765 20081204
- Main IPC: H01L21/441
- IPC: H01L21/441

Abstract:
A method of manufacturing a semiconductor device, forms connection pads electrically connected to integrated circuit portion formed in a semiconductor substrate, lays an insulating film and a protective film one over another, forms sub-lines electrically connected to the connection pads on the protective film, forms a coating film covering the sub-lines and the protective film, sticks a dry film onto the coating film, forms external connection electrodes externally connectable and electrically connected to the sub-lines, and removes the dry film and forms a sealing layer covering the coating film and side surfaces of the external connection electrodes.
Public/Granted literature
- US07910478B2 Method of manufacturing semiconductor devices Public/Granted day:2011-03-22
Information query
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