发明申请
- 专利标题: Memory Access Time Measurement Using Phase Detector
- 专利标题(中): 使用相位检测器进行存储器访问时间测量
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申请号: US12328283申请日: 2008-12-04
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公开(公告)号: US20100146320A1公开(公告)日: 2010-06-10
- 发明人: Nan Chen , Zhiqin Chen , Varun Verma
- 申请人: Nan Chen , Zhiqin Chen , Varun Verma
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM INCORPORATED
- 当前专利权人: QUALCOMM INCORPORATED
- 当前专利权人地址: US CA San Diego
- 主分类号: G06F1/12
- IPC分类号: G06F1/12 ; G06F1/14
摘要:
Methods and systems for determining a memory access time are provided. A first phase skew is measured between a first clock signal used by a memory and a second clock signal used as a reference clock signal. Then, a second phase skew is measured between a delayed version of the first clock signal output by the memory when the memory completes a given read operation and the second clock signal. The memory access time is determined based on the first and second phase skews.
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