发明申请
- 专利标题： METHOD FOR IMPROVED GROWTH OF SEMIPOLAR (AL,IN,GA,B)N
- 专利标题（中）： 改进生长的方法（AL，IN，GA，B）N
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申请号： US12710181申请日： 2010-02-22
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公开(公告)号： US20100148195A1公开(公告)日： 2010-06-17
- 发明人: John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hiroshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hiroshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L29/205
摘要：
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
公开/授权文献
- US08110482B2 Miscut semipolar optoelectronic device 公开/授权日：2012-02-07