发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US12712809申请日: 2010-02-25
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公开(公告)号: US20100148274A1公开(公告)日: 2010-06-17
- 发明人: Kaori Tai , Masanori Tsukamoto , Masashi Nakata , Itaru Oshiyama
- 申请人: Kaori Tai , Masanori Tsukamoto , Masashi Nakata , Itaru Oshiyama
- 申请人地址: JP Tokyo
- 专利权人: SONY CORPORATION
- 当前专利权人: SONY CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2006-281026 20061016; JP2007-161030 20070619
- 主分类号: H01L27/092
- IPC分类号: H01L27/092 ; H01L21/8238
摘要:
A semiconductor device including an N-channel insulated gate field effect transistor and a P-channel insulated gate field effect transistor, the device having: a first insulating layer and a second insulating layer; and gate electrode contact plugs. Each of the gate electrodes of the N-channel insulated gate field effect transistor and the P-channel insulated gate field effect transistor is buried in a gate electrode formation opening provided in the first insulating layer.
公开/授权文献
- US07902610B2 Semiconductor device and method for manufacturing same 公开/授权日:2011-03-08