发明申请
- 专利标题： SELF ALIGNED FIELD EFFECT TRANSISTOR STRUCTURE
- 专利标题（中）： 自对准场效应晶体管结构
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申请号： US12619116申请日： 2009-11-16
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公开(公告)号： US20100155793A1公开(公告)日： 2010-06-24
- 发明人: Lee-Mi DO , Kyu-Ha Baek
- 申请人： Lee-Mi DO , Kyu-Ha Baek
- 申请人地址： KR Daejeon
- 专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2008-0131869 20081223
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
Provided is a self aligned filed effect transistor structure. The self aligned field effect transistor structure includes: an active region on a substrate; a U-shaped gate insulation pattern on the active region; and a gate electrode self-aligned by the gate insulation pattern and disposed in an inner space of the gate insulation pattern.
公开/授权文献
- US08143670B2 Self aligned field effect transistor structure 公开/授权日：2012-03-27
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