发明申请
- 专利标题： FIELD EFFECT TRANSISTOR WITH ALTERNATE ELECTRICAL CONTACTS
- 专利标题（中）： 具有替代电气接触的场效应晶体管
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申请号： US12665463申请日： 2008-06-19
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公开(公告)号： US20100155843A1公开(公告)日： 2010-06-24
- 发明人: Frederic Mayer , Laurent Clavelier , Thierry Poiroux , Gerard Billiot
- 申请人： Frederic Mayer , Laurent Clavelier , Thierry Poiroux , Gerard Billiot
- 申请人地址： FR Paris
- 专利权人： Commissariat A L'Energie Atomique
- 当前专利权人： Commissariat A L'Energie Atomique
- 当前专利权人地址： FR Paris
- 优先权： FR0755936 20070621
- 国际申请： PCT/EP2008/057773 WO 20080619
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/762
摘要：
A field effect transistor including: a support layer, a plurality of active zones based on a semiconductor, each active zone configured to form a channel and arranged between two gates adjacent to each other and consecutive, the active zones and the gates being arranged on the support layer, each gate including a first face on the side of the support layer and a second face opposite the first face. The second face of a first of the two gates is electrically connected to a first electrical contact made on the second face of the first of the two gates, and the first face of a second of the two gates is electrically connected to a second electrical contact passing through the support layer. The gates of the transistor are not electrically connected to each other.
公开/授权文献
- US08866225B2 Field effect transistor with alternate electrical contacts 公开/授权日：2014-10-21
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