发明申请
US20100159709A1 MASK PATTERN CORRECTING METHOD, MASK PATTERN INSPECTING METHOD, PHOTO MASK MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
有权
掩模图像校正方法，掩模图案检查方法，照相胶片制造方法和半导体器件制造方法
- 专利标题： MASK PATTERN CORRECTING METHOD, MASK PATTERN INSPECTING METHOD, PHOTO MASK MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- 专利标题（中）： 掩模图像校正方法，掩模图案检查方法，照相胶片制造方法和半导体器件制造方法
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申请号： US12717914申请日： 2010-03-04
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公开(公告)号： US20100159709A1公开(公告)日： 2010-06-24
- 发明人: Toshiya KOTANI , Satoshi Tanaka , Shigeki Nojima , Koji Hashimoto , Soichi Inoue
- 申请人： Toshiya KOTANI , Satoshi Tanaka , Shigeki Nojima , Koji Hashimoto , Soichi Inoue
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 优先权： JP2004-057490 20040302
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; G03F1/00
摘要：
A pattern correcting method for correcting a design pattern to form a desired pattern on a wafer is disclosed, which comprises defining an allowable dimensional change quantity of each of design patterns, defining a pattern correction condition for the each design pattern based on the allowable dimensional change quantity defined for the each design pattern, and correcting the each design pattern based on the pattern correction condition defined for the each design pattern.
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