发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US12627060申请日： 2009-11-30
-
公开(公告)号： US20100164007A1公开(公告)日： 2010-07-01
- 发明人: Kazuhiro ONISHI , Kazuhiro Tsukamoto
- 申请人： Kazuhiro ONISHI , Kazuhiro Tsukamoto
- 专利权人： RENESAS TECHNOLOGY CORP.
- 当前专利权人： RENESAS TECHNOLOGY CORP.
- 优先权： JP2008-335656 20081229
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L27/11 ; H01L21/8234
摘要：
To provide a semiconductor device and a method of manufacturing the same capable of suppressing, when a plurality of MIS transistors having different absolute values of threshold voltage is used, the reduction of the drive current of a MIS transistor having a greater absolute value of threshold voltage.The threshold voltage of a second nMIS transistor is greater than the threshold voltage of a first nMIS transistor and the sum of the concentration of lanthanum atom and the concentration of magnesium atom in a second nMIS high-k film included in the second nMIS transistor is lower than the sum of the concentration of lanthanum atom and the concentration of magnesium atom in a first nMIS high-k film included in the first nMIS transistor.
公开/授权文献
- US08384160B2 Semiconductor device and method of manufacturing same 公开/授权日：2013-02-26