发明申请
- 专利标题： ADJUSTING OF STRAIN CAUSED IN A TRANSISTOR CHANNEL BY SEMICONDUCTOR MATERIAL PROVIDED FOR THRESHOLD ADJUSTMENT
- 专利标题（中）： 通过用于阈值调整的半导体材料调节晶体管通道中的应变
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申请号： US12648744申请日： 2009-12-29
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公开(公告)号： US20100164016A1公开(公告)日： 2010-07-01
- 发明人: Stephan Kronholz , Thorsten Kammler , Gunda Beernink , Carsten Reichel
- 申请人： Stephan Kronholz , Thorsten Kammler , Gunda Beernink , Carsten Reichel
- 优先权： DE102008063432.8 20081231
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
The threshold voltage of a sophisticated transistor may be adjusted by providing a specifically designed semiconductor alloy in the channel region of the transistor, wherein a negative effect of this semiconductor material with respect to inducing a strain component in the channel region may be reduced or over-compensated for by additionally incorporating a strain-adjusting species. For example, a carbon species may be incorporated in the channel region, the threshold voltage of which may be adjusted on the basis of a silicon/germanium alloy of a P-channel transistor. Consequently, sophisticated metal gate electrodes may be formed in an early manufacturing stage.
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