发明申请
- 专利标题： INCLINED EXPOSURE LITHOGRAPHY SYSTEM
- 专利标题（中）： 曝光曝光系统
-
申请号： US12721183申请日： 2010-03-10
-
公开(公告)号： US20100165316A1公开(公告)日： 2010-07-01
- 发明人: YING-JUI HUANG , Cheng-Hsuan Lin , Fuh-Yu Chang
- 申请人： YING-JUI HUANG , Cheng-Hsuan Lin , Fuh-Yu Chang
- 申请人地址： TW Hsinchu
- 专利权人： Industrial Technology Research Institute
- 当前专利权人： Industrial Technology Research Institute
- 当前专利权人地址： TW Hsinchu
- 优先权： TW096149668 20071224; TW097122986 20080620
- 主分类号： G03B27/54
- IPC分类号： G03B27/54
摘要：
An inclined exposure lithography system is disclosed, which comprises: a substrate; a photoresist layer, formed on the substrate; a mask, disposed over the photoresist layer with a gap therebetween; and a refraction element disposed over the mask so that a light beam from a light source is refracted by a specific angle.
信息查询
