Invention Application
- Patent Title: SINGLE-ENDED BIT LINE BASED STORAGE SYSTEM
- Patent Title (中): 单端口基于存储系统
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Application No.: US12345959Application Date: 2008-12-30
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Publication No.: US20100165755A1Publication Date: 2010-07-01
- Inventor: Kedar Janardhan Dhori
- Applicant: Kedar Janardhan Dhori
- Applicant Address: IN Greater Noida
- Assignee: STMicroelectronics Pvt. Ltd.
- Current Assignee: STMicroelectronics Pvt. Ltd.
- Current Assignee Address: IN Greater Noida
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/416

Abstract:
A single-ended bit line based storage system. The storage system includes a first set of storage cells, a second set of storage cells, a first set of reference storage cells, a second set of reference storage cells, and a differential sensing block. The memory core is split vertically in half vertically to form the first set of storage cells and the second set of storage cells. The first set of reference storage cells provides a discharge rate lower than the discharge rate of said first set and second set of storage cells for storing data. The second set of reference storage cells provides a discharge rate lower than the discharge rate of said first set and second set of storage cells for storing data. The differential sensing block is coupled to the first set of storage cells and the second set of storage cells for generating an output data signal on receiving a control signal.
Public/Granted literature
- US08154936B2 Single-ended bit line based storage system Public/Granted day:2012-04-10
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