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发明申请
US20100166943A1 TECHNIQUE FOR MEASURING PROCESS INDUCED MAGNETIC ANISOTROPY IN A MAGNETORESISTIVE SENSOR 有权
磁传感器中测量过程诱导磁性异相的技术

  • 专利标题： TECHNIQUE FOR MEASURING PROCESS INDUCED MAGNETIC ANISOTROPY IN A MAGNETORESISTIVE SENSOR
  • 专利标题（中）： 磁传感器中测量过程诱导磁性异相的技术
  • 申请号： US12345745
    申请日： 2008-12-30
  • 公开(公告)号： US20100166943A1
    公开(公告)日： 2010-07-01
  • 发明人: Yimin Hsu , Arley Cleveland Marley
  • 申请人： Yimin Hsu , Arley Cleveland Marley
  • 主分类号： C23C16/52
  • IPC分类号： C23C16/52
TECHNIQUE FOR MEASURING PROCESS INDUCED MAGNETIC ANISOTROPY IN A MAGNETORESISTIVE SENSOR
摘要：
A method for determining a magnetic anisotropy of a free layer of a magnetoresistive sensor. The method includes forming a functional magnetoresistive sensor and also a test sensor on a wafer. The test sensor has a sensor stack that is identical to that of the functional sensor, however the test head does not have a magnetic bias structure for biasing the free layer. A series of tests can be performed to construct a transfer curve for the test sensor. This can then be used to determine a magnetic anisotropy of the test head, which also corresponds to a magnetic anisotropy of the functional head.
摘要（中）：

用于确定磁阻传感器的自由层的磁各向异性的方法。 该方法包括在晶片上形成功能磁阻传感器以及测试传感器。 测试传感器具有与功能传感器相同的传感器堆叠，然而测试头不具有用于偏置自由层的磁偏置结构。 可以进行一系列测试以构建测试传感器的传递曲线。 这可以用于确定测试头的磁各向异性，其也对应于功能头的磁各向异性。

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