发明申请
- 专利标题: Nanostructured Layer and Fabrication Methods
- 专利标题(中): 纳米结构层和制备方法
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申请号: US12643565申请日: 2009-12-21
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公开(公告)号: US20100166954A1公开(公告)日: 2010-07-01
- 发明人: Jacqueline Fidanza , Brian M. Sager , Martin R. Roscheisen , Dong Yu , Gina J. Gerritzen
- 申请人: Jacqueline Fidanza , Brian M. Sager , Martin R. Roscheisen , Dong Yu , Gina J. Gerritzen
- 主分类号: B05D5/00
- IPC分类号: B05D5/00
摘要:
Nanostructured layers with 10 nm to 50 nm pores spaced 10-50 nm apart, a method for making such nanostructured layers, optoelectronic devices having such nanostructured layers and uses for such nanostructured layers are disclosed. The nanostructured layer can be formed using precursor sol, which generally includes one or more covalent metal complexes, one or more surfactants, a solvent, one or more optional condensation inhibitors, and (optionally) water. Evaporating the solvent from the precursor sol forms a surfactant-templated film. Covalently crosslinking the surfactant-templated film forms a nanostructured porous layer. Pore size is controlled, e.g., by appropriate solvent concentration, choice of surfactant, use of chelating agents, use of swelling agents or combinations of these.
公开/授权文献
- US08257788B2 Nanostructured layer and fabrication methods 公开/授权日:2012-09-04
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